SSD 2Tb Samsung 860 QVO 2.5 SATA3

SSD 2Tb Samsung 860 QVO 2.5 SATA3

Samsung
  • Capacity: 2000 GB.
  • Format: 2.5 ".
  • Interface: SATAIII.
  • Read speed: 550 MB / s.
  • Write speed: 520 MB / s.
  • Data transfer rate: 6 Gbit / s.

P/N: MZ-76Q2T0BW - EAN/UPC: 8801643443740

231,65 € Without VAT
280,30 € With VAT
Canon Digital not included: 5,45 € + Taxes
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The 860 QVO SSD offers ample storage space, solid reliability and performance, and exceptional value. An achievement made possible by Samsung's latest 4-bit NAND MLC flash technology. It's time to expand or upgrade to the SSD speed you need.

With speeds of up to 550 MB / s read and 520 MB / s write, you'll feel like you've got a new computer thanks to faster startup, shutdown and transfers and better application response. Smart TurboWrite accelerates write speed and maintains long-term high performance with a larger variable buffer.

The 860 QVO is a reliable alternative to traditional storage, created with Samsung V-NAND technology and backed by a 3-year limited warranty or up to 1440 TBW. Samsung's comprehensive SSD user pattern analysis indicates that the TBW range is sufficient to ensure everyday PC use.

Discover faster and smoother communication with the host system. Improved ECC * algorithm and new MJX driver generate higher speeds, and improved queue reduction increases Linux compatibility.

Greater capacity and speed: the change is worth it. A fast SSD with higher terabyte capacities enhances your computing experience. Go from multiple storage solutions to a fast, high-capacity SSD that lets you keep your OS, applications, and data together.

Advanced unit management, now easier than ever. Samsung Magician software helps you monitor your unit. A set of simple tools to help you keep your drive up-to-date, check its status and speed, and even increase performance.

Highlights ...

* Capacity: 2000 GB.
* SSD disk form factor: 2.5 ".
* Reading speed: 550 MB / s.
* Write speed: 520 MB / s.
* Data transfer rate: 6 Gbit / s.

Interfaz del disco SATA III
Capacidad de disco duro 2000 GB
Velocidad de lectura 550 MB/s
Velocidad de escritura 520 MB/s
Lectura aleatoria (4KB) 97000 IOPS
Escritura aleatoria (4KB) 42000 IOPS
Voltaje de operación 5V
Tipo de memoria V-NAND MLC
Algoritmo de seguridad 256-bit AES
Tiempo entre fallos 15000000 h
Soporte SMART Si

The 860 QVO SSD offers ample storage space, solid reliability and performance, and exceptional value. An achievement made possible by Samsung's latest 4-bit NAND MLC flash technology. It's time to expand or upgrade to the SSD speed you need.

With speeds of up to 550 MB / s read and 520 MB / s write, you'll feel like you've got a new computer thanks to faster startup, shutdown and transfers and better application response. Smart TurboWrite accelerates write speed and maintains long-term high performance with a larger variable buffer.

The 860 QVO is a reliable alternative to traditional storage, created with Samsung V-NAND technology and backed by a 3-year limited warranty or up to 1440 TBW. Samsung's comprehensive SSD user pattern analysis indicates that the TBW range is sufficient to ensure everyday PC use.

Discover faster and smoother communication with the host system. Improved ECC * algorithm and new MJX driver generate higher speeds, and improved queue reduction increases Linux compatibility.

Greater capacity and speed: the change is worth it. A fast SSD with higher terabyte capacities enhances your computing experience. Go from multiple storage solutions to a fast, high-capacity SSD that lets you keep your OS, applications, and data together.

Advanced unit management, now easier than ever. Samsung Magician software helps you monitor your unit. A set of simple tools to help you keep your drive up-to-date, check its status and speed, and even increase performance.

Highlights ...

* Capacity: 2000 GB.
* SSD disk form factor: 2.5 ".
* Reading speed: 550 MB / s.
* Write speed: 520 MB / s.
* Data transfer rate: 6 Gbit / s.

Interfaz del disco SATA III
Capacidad de disco duro 2000 GB
Velocidad de lectura 550 MB/s
Velocidad de escritura 520 MB/s
Lectura aleatoria (4KB) 97000 IOPS
Escritura aleatoria (4KB) 42000 IOPS
Voltaje de operación 5V
Tipo de memoria V-NAND MLC
Algoritmo de seguridad 256-bit AES
Tiempo entre fallos 15000000 h
Soporte SMART Si