Español SSD mSATA 1TB Samsung 860 EVO
SSD mSATA 1TB Samsung 860 EVO
- Improved performance, even with large workloads.
- Sequential reading of up to 550Mb / s.
- Sequential write up to 520Mb / s.
- Store securely and render without problems.
- Benefit from faster and more fluid communication with your team.
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Introducing the new version of the leading sales SATA SSD, the Samsung 860 EVO. Designed for high-end computers and laptops, the new SSD features the latest Samsung V-NAND technology and a robust algorithm-based controller, and is available in different formats and capacities.
Enjoy constant speed even with large workloads and multitasking. The Samsung SSD 860 EVO drive provides a sequential write speed of up to 520 MB / s thanks to Intelligent TurboWrite technology, and a sequential write speed of up to 550 MB / s. The TurboWrite buffer size has been improved from 12 GB to 78 GB, offering faster file transfer.
It stores securely and renders smoothly videos and 3D data used by the latest applications, up to 8 times more TBW (written Terabytes) * than the previous 850 EVO model. The latest V-NAND technology offers a market leading warranty with a 5 year warranty or 2,400 TBW.
Highlights...
* Solid state disk, capacity: 250 GB.
* SSD disk form factor: mSATA.
* Solid state disk interfaces: mini-SATA.
| General features | |
| Capacity | 1000Gb |
| Format | 2.5 inch |
| Interface | SATA 6 Gb / s interface, compatible with SATA 3 Gb / s & SATA 1.5 Gb / s |
| Dimensions | (29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) |
| Weight | Máx. 8.5g |
| NAND type | Samsung V-NAND 3bit MLC |
| Controller | Samsung MJX Controller |
| Cache memory | Samsung 1Gb Low Power DDR4 SDRAM |
| Special features | |
| Support TRIM | TRIM |
| Support S.M.A.R.T. | S.M.A.R.T. |
| GC | Auto Garbage Coolection Algorithm |
| Encryption | AES 256-bit |
| Support Suction Mode | Yes |
| Performance | |
| Sequential reading | Up 500Mb/s |
| Sequential writing | Up 520Mb/s |
| Random reading (4KB, QD32) | Up 97.000IOPS |
| Random writing (4KB, QD32) | Up 88.000IOPS |
| Random reading (4KB, QD1) | Up 10.000IOPS |
| Random writing (4KB, QD1) | Up 42.000IOPS random Write |
| Environment | |
| Energy consumption | 4.5W max |
| Durability | 1.5 million hours |
| Temperature | 0 - 70ºC |
| Hits | 1.500 G & 0.5 ms |
Introducing the new version of the leading sales SATA SSD, the Samsung 860 EVO. Designed for high-end computers and laptops, the new SSD features the latest Samsung V-NAND technology and a robust algorithm-based controller, and is available in different formats and capacities.
Enjoy constant speed even with large workloads and multitasking. The Samsung SSD 860 EVO drive provides a sequential write speed of up to 520 MB / s thanks to Intelligent TurboWrite technology, and a sequential write speed of up to 550 MB / s. The TurboWrite buffer size has been improved from 12 GB to 78 GB, offering faster file transfer.
It stores securely and renders smoothly videos and 3D data used by the latest applications, up to 8 times more TBW (written Terabytes) * than the previous 850 EVO model. The latest V-NAND technology offers a market leading warranty with a 5 year warranty or 2,400 TBW.
Highlights...
* Solid state disk, capacity: 250 GB.
* SSD disk form factor: mSATA.
* Solid state disk interfaces: mini-SATA.
| General features | |
| Capacity | 1000Gb |
| Format | 2.5 inch |
| Interface | SATA 6 Gb / s interface, compatible with SATA 3 Gb / s & SATA 1.5 Gb / s |
| Dimensions | (29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) |
| Weight | Máx. 8.5g |
| NAND type | Samsung V-NAND 3bit MLC |
| Controller | Samsung MJX Controller |
| Cache memory | Samsung 1Gb Low Power DDR4 SDRAM |
| Special features | |
| Support TRIM | TRIM |
| Support S.M.A.R.T. | S.M.A.R.T. |
| GC | Auto Garbage Coolection Algorithm |
| Encryption | AES 256-bit |
| Support Suction Mode | Yes |
| Performance | |
| Sequential reading | Up 500Mb/s |
| Sequential writing | Up 520Mb/s |
| Random reading (4KB, QD32) | Up 97.000IOPS |
| Random writing (4KB, QD32) | Up 88.000IOPS |
| Random reading (4KB, QD1) | Up 10.000IOPS |
| Random writing (4KB, QD1) | Up 42.000IOPS random Write |
| Environment | |
| Energy consumption | 4.5W max |
| Durability | 1.5 million hours |
| Temperature | 0 - 70ºC |
| Hits | 1.500 G & 0.5 ms |
