Español Samsung 8Gb SO-DIMM DDR4 2666Mhz 1.2V
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Samsung 8Gb SO-DIMM DDR4 2666Mhz 1.2V
- Memory design: 1 x 8Gb.
- Memory Clock Speed: 2666 MHz.
- Internal memory type: DDR4 SO-DIMM.
- CAS Latency: CL19.
- Memory voltage: 1.2 V.
P/N: M471A1K43CB1-CTD - EAN/UPC: 4260580370849
33,01 € Without VAT
39,94 € With VAT
2 years
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(RAM SO-DIMM DDR4 8GB / PC2666 / UB / Samsung)
Highlight...
* Memory design: 1 x 8Gb.
* Memory clock speed: 2666 MHz.
* Internal memory type: DDR4 SO-DIMM.
* CAS Latency: CL19.
* Memory voltage: 1.2 V.
| Latencia CAS | 19 |
| Memoria interna | 8 GB |
| Diseño de memoria (módulos x tamaño) | 1 x 8 GB |
| Tipo de memoria interna | DDR4 |
| Velocidad de memoria del reloj | 2666 MHz |
| Componente para | PORTATIL |
| Forma de factor de memoria | SO-DIMM |
| Tipo de memoria con búfer | Unregistered (unbuffered) |
| Voltaje de memoria | 1.2 |
(RAM SO-DIMM DDR4 8GB / PC2666 / UB / Samsung)
Highlight...
* Memory design: 1 x 8Gb.
* Memory clock speed: 2666 MHz.
* Internal memory type: DDR4 SO-DIMM.
* CAS Latency: CL19.
* Memory voltage: 1.2 V.
| Latencia CAS | 19 |
| Memoria interna | 8 GB |
| Diseño de memoria (módulos x tamaño) | 1 x 8 GB |
| Tipo de memoria interna | DDR4 |
| Velocidad de memoria del reloj | 2666 MHz |
| Componente para | PORTATIL |
| Forma de factor de memoria | SO-DIMM |
| Tipo de memoria con búfer | Unregistered (unbuffered) |
| Voltaje de memoria | 1.2 |
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