Español Samsung 16Gb DDR4 2666Mhz RDIMM 1.2V ECC
Samsung 16Gb DDR4 2666Mhz RDIMM 1.2V ECC
- Internal Memory: 16Gb.
- Memory layout (modules x size): 1 x 16 GB.
- Memory type: DDR4.
- Clock memory speed: 2666 MHz.
- Format: RDIMM.
- CAS latency: 19.
- ECC.
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Samsung memory modules are designed for a wide range of applications, to offer the best performance with low power requirements.
Includes a register to improve clock, command and control signals. Supports x4 / x8 organization / up to 2 ranges per DIMM and 3DPC configuration. Error correction available using additional 8-bit parity signals.
Highlights ...
* Internal Memory: 16Gb.
* Memory layout (modules x size): 1 x 16 GB.
* Memory type: DDR4.
* Clock memory speed: 2666 MHz.
* Format: RDIMM.
* CAS latency: 19.
* ECC.
| Tipo | DDR4 |
| Formato | RDIMM |
| Capacidad | 16Gb |
| Velocidad | 2666 Mhz |
| Rank x Org | 1R x4 |
| Composición | (2G x 4) x 18 |
| Nº de Pin | 288 |
| Voltaje | 1.2V |
| Latencia CAS | 19 |
Samsung memory modules are designed for a wide range of applications, to offer the best performance with low power requirements.
Includes a register to improve clock, command and control signals. Supports x4 / x8 organization / up to 2 ranges per DIMM and 3DPC configuration. Error correction available using additional 8-bit parity signals.
Highlights ...
* Internal Memory: 16Gb.
* Memory layout (modules x size): 1 x 16 GB.
* Memory type: DDR4.
* Clock memory speed: 2666 MHz.
* Format: RDIMM.
* CAS latency: 19.
* ECC.
| Tipo | DDR4 |
| Formato | RDIMM |
| Capacidad | 16Gb |
| Velocidad | 2666 Mhz |
| Rank x Org | 1R x4 |
| Composición | (2G x 4) x 18 |
| Nº de Pin | 288 |
| Voltaje | 1.2V |
| Latencia CAS | 19 |
