G.Skill 4Gb DDR4 2133Mhz 1.2V

G.Skill 4Gb DDR4 2133Mhz 1.2V

G Skill
  • DDR4 2133Nhz
  • Time 15-15-15-35.
  • CAS latency 15.
  • Voltage 1.20V.

P/N: F4-2133C15S-4GNT - EAN/UPC: 4719692006844

20,84 € Without VAT
25,22 € With VAT
In stock in secondary storage
Approximate delivery between 20 mayo and 23 mayo
3 years
of guarantee
Shipment
Insured
100%
Secure pay

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With the goal of best price / performance value, each G.SKILL Value Memory Kit is 100% selected for the highest quality, while maintaining incredible affordability. It is the best option to build an economical performance PC.

G.SKILL DDR4 memory is designed for the best experience on the latest DDR4 platform! Whether you're processing large amounts of data or intense gaming, experience smooth system performance with the latest next-generation PC memory technology! All G.SKILL DDR4 memory kits are tested with an extensive suite of testing software to ensure maximum performance and stability.

G.SKILL DDR4 memory kits are validated for compatibility with most DDR4 platforms under a series of rigorous tests on four-channel memory operations. It is guaranteed to provide best-in-class performance, compatibility, and stability with the widest range of motherboards.

Starting at 2133 MHz as the standard frequency, DDR4 memory offers much higher bandwidth than previous DDR memory. You can enjoy a faster computing experience for gaming, video and image editing, rendering, and other professional applications.

Designed with a low voltage of 1.2V ~ 1.35V in the DDR4 standard, this reduces the memory voltage requirement by 20% for DDR3 memory kits. Now your system can run even faster without becoming an expensive appliance heater.

Highlights...

* DDR4 2133Nhz
* Time 15-15-15-35.
* CAS latency 15.
* Voltage 1.20V. 
 

Capacidad 4GB (4GBx1)
Tipo  SDRAM DDR4 de 288 pines
Velocidad  DDR4 2133MHz
Latencia CAS  15
Momento  15-15-15-35
Voltaje  1,20 V
ECC  No
En búfer / registrado  Sin búfer
Kit multicanal Kit de doble canal
Características Memoria DDR4 de rendimiento extremo diseñada para entusiastas de los juegos y las PC

Compatibilidad optimizada con placas base Intel X99 y de la serie 100 Compatibilidad con Intel XMP 2.0 de

voltaje ultra bajo de 1,2 V

With the goal of best price / performance value, each G.SKILL Value Memory Kit is 100% selected for the highest quality, while maintaining incredible affordability. It is the best option to build an economical performance PC.

G.SKILL DDR4 memory is designed for the best experience on the latest DDR4 platform! Whether you're processing large amounts of data or intense gaming, experience smooth system performance with the latest next-generation PC memory technology! All G.SKILL DDR4 memory kits are tested with an extensive suite of testing software to ensure maximum performance and stability.

G.SKILL DDR4 memory kits are validated for compatibility with most DDR4 platforms under a series of rigorous tests on four-channel memory operations. It is guaranteed to provide best-in-class performance, compatibility, and stability with the widest range of motherboards.

Starting at 2133 MHz as the standard frequency, DDR4 memory offers much higher bandwidth than previous DDR memory. You can enjoy a faster computing experience for gaming, video and image editing, rendering, and other professional applications.

Designed with a low voltage of 1.2V ~ 1.35V in the DDR4 standard, this reduces the memory voltage requirement by 20% for DDR3 memory kits. Now your system can run even faster without becoming an expensive appliance heater.

Highlights...

* DDR4 2133Nhz
* Time 15-15-15-35.
* CAS latency 15.
* Voltage 1.20V. 
 

Capacidad 4GB (4GBx1)
Tipo  SDRAM DDR4 de 288 pines
Velocidad  DDR4 2133MHz
Latencia CAS  15
Momento  15-15-15-35
Voltaje  1,20 V
ECC  No
En búfer / registrado  Sin búfer
Kit multicanal Kit de doble canal
Características Memoria DDR4 de rendimiento extremo diseñada para entusiastas de los juegos y las PC

Compatibilidad optimizada con placas base Intel X99 y de la serie 100 Compatibilidad con Intel XMP 2.0 de

voltaje ultra bajo de 1,2 V